PART |
Description |
Maker |
2SD1068 |
TENTATIVE
|
SONY[Sony Corporation]
|
STK621-041 |
TENTATIVE
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
R5F21344MDFP R5F21344MNFP R5F21345MDFP R5F21345MNF |
Specifications in this document are tentative and subject to change
|
Renesas Electronics Corporation
|
2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
List of Unclassifed Manufacturers ETC[ETC]
|
2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
1MBI150SH-140 |
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor Tentative target specification
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
2SA493 2SA493-GR 2SA493-Y |
PNP transistor for low noise audio amplifier applications From old datasheet system SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
TOSHIBA ETC[ETC] List of Unclassifed Manufacturers
|
2SD2258 2SD2258TENTATIVE |
2SD2258 (Tentative) - Silicon NPN epitaxial planer type Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我(直)|92 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我(直)|2
|
KEMET, Corp. Electronic Theatre Controls, Inc.
|